High optical contrast in VO₂ thin films due to improved stoichiometryNYBERG, G. A; BUHRMAN, R. A.Thin solid films. 1987, Vol 147, Num 2, pp 111-116, issn 0040-6090Article

Obervations of Kondo scattering without magnetic impurities : a point contact study of two-level tunneling systems in metalsRALPH, D. C; BUHRMAN, R. A.Physical review letters. 1992, Vol 69, Num 14, pp 2118-2121, issn 0031-9007Article

Defect dynamics and wear-out in thin silicon oxidesFARMER, K. R; BUHRMAN, R. A.Semiconductor science and technology. 1989, Vol 4, Num 12, pp 1084-1105, issn 0268-1242, 22 p.Article

Current fluctuations and silicon oxide wear-out in metal-oxide-semiconductor tunnel diodesFARMER, K. R; SALETTI, R; BUHRMAN, R. A et al.Applied physics letters. 1988, Vol 52, Num 20, pp 1749-1751, issn 0003-6951Article

Composition of 1/f noise in metal-insulator-metal tunnel junctionsROGERS, C. T; BUHRMAN, R. A.Physical review letters. 1984, Vol 53, Num 13, pp 1272-1275, issn 0031-9007Article

Optical response of Cermet composite films in the microstructural transition region = Réponse optique de couches minces de composite Cermet dans la région de transition microstructuraleGIBSON, U. J; BUHRMAN, R. A.Physical review. B, Condensed matter. 1983, Vol 27, Num 8, pp 5046-5051, issn 0163-1829Article

Boron diffusion in silicon oxides and oxynitridesELLIS, K. A; BUHRMAN, R. A.Journal of the Electrochemical Society. 1998, Vol 145, Num 6, pp 2068-2074, issn 0013-4651Article

Role of interfacial nitrogen in improving thin silicon oxides grown in N₂OCARR, E. C; BUHRMAN, R. A.Applied physics letters. 1993, Vol 63, Num 1, pp 54-56, issn 0003-6951Article

NbN Josephson tunnel junctions for terahertz local oscillatorsROBERTAZZI, R. P; BUHRMAN, R. A.Applied physics letters. 1988, Vol 53, Num 24, pp 2441-2443, issn 0003-6951Article

Nature of single-localized-electron states derived from tunneling measurementsROGERS, C. T; BUHRMAN, R. A.Physical review letters. 1985, Vol 55, Num 8, pp 859-862, issn 0031-9007Article

Impact of a single defect on the conductance : local interference and universal conductance fluctuationsRALLS, K. S; RALPH, D. C; BUHRMAN, R. A et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 16, pp 10509-10514, issn 0163-1829Article

Nitrous oxide (N₂O) processing for silicon oxynitride gate dielectricsELLIS, K. A; BUHRMAN, R. A.IBM journal of research and development. 1999, Vol 43, Num 3, pp 287-300, issn 0018-8646Article

On the characteristic voltage of highly oxygenated YBCO grain boundary junctionsSYDOW, J. P; BERNINGER, M; BUHRMAN, R. A et al.Superconductor science & technology (Print). 1999, Vol 12, Num 11, pp 723-725, issn 0953-2048Conference Paper

Effects of oxygen content on YBCO Josephson junction structuresSYDOW, J. P; BERNINGER, M; BUHRMAN, R. A et al.IEEE transactions on applied superconductivity. 1999, Vol 9, Num 2, pp 2993-2996, issn 1051-8223, 3Conference Paper

Growth and properties of YSr₂Cu_2.75Mo_0.25O_7.δ thin filmsSYDOW, J. P; CHAMBERLAIN, D; RONNIG, F et al.IEEE transactions on applied superconductivity. 1997, Vol 7, Num 2, pp 2138-2141, issn 1051-8223, 2Conference Paper

Electromigration studies of the role of oxygen defects in YBa₂Cu₃O_7-δ grain boundary weak linksMOECKLY, B. H; BUHRMAN, R. A.IEEE transactions on applied superconductivity. 1993, Vol 3, Num 1, pp 2038-2042, issn 1051-8223, 4Conference Paper

Scattering and spectral shape in ballistic-electron-emission microscopy of NiSi₂-Si(111) and Au-Si samplesHALLEN, H. D; FERNANDEZ, A; HUANG, T et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 11, pp 7256-7259, issn 0163-1829Article

Far-infrared measurement of α²(ω)F(ω) in superconducting La_1.84Sr_0.16CuO_4-γSULEWSKI, P. E; SIEVERS, A. J; BUHRMAN, R. A et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 16, pp 8829-8832, issn 0163-1829Article

Electromigration study of oxygen disorder and grain-boundary effects in YBa₂Cu₃O_7-δ thin filmsMOECKLY, B. H; LATHROP, D. K; BUHRMAN, R. A et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 1, pp 400-417, issn 0163-1829Article

Individual-defect electromigration in metal nanobridges = Electromigration de défauts individuels dans des ponts métalliques nanoscropiquesRALLS, K. S; RALPH, D. C; BUHRMAN, R. A et al.Physical review. B, Condensed matter. 1989, Vol 40, Num 17, pp 11561-11570, issn 0163-1829Article

Interacting and self-organized two-level states in tunnel barriersPESENSON, L; ROBERTAZZI, R. P; BUHRMAN, R. A et al.Physical review letters. 1991, Vol 67, Num 20, pp 2866-2869, issn 0031-9007Article

Ballistic electron studies and modification of the Au/Si interfaceFERNANDEZ, A; HALLEN, H. D; HUANG, T et al.Applied physics letters. 1990, Vol 57, Num 26, pp 2826-2828, issn 0003-6951, 3 p.Article

Clean grain boundaries and weak links in high T_c superconducting YBa₂Cu₃O_7-x thin filmsSHIN, D. H; SILCOX, J; RUSSEK, S. E et al.Applied physics letters. 1990, Vol 57, Num 5, pp 508-510, issn 0003-6951, 3 p.Article

Growth of YBa₂Cu₃O₇ thin films on MgO : the effect of substrate preparationMOECKLY, B. H; RUSSEK, S. E; LATHROP, D. K et al.Applied physics letters. 1990, Vol 57, Num 16, pp 1687-1689, issn 0003-6951Article

Epitaxial Y-Ba-Cu-O thin films on MgO deposited by high-pressure reactive magnetron sputteringTANABE, K; LATHROP, D. K; RUSSEK, S. E et al.Journal of applied physics. 1989, Vol 66, Num 7, pp 3148-3153, issn 0021-8979Article